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PUBLICATIONS

Title of the publication
Authors
Title of the journal or equivalent
Type of publication
Link to OA Repository
Modelling and design of FTJs as high reading-impedance synaptic devices
IUNET - UNIUD
IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2021
Conference Paper
Download
Ferroelectric Based FETs and Synaptic Devices for Highly Energy Efficient Computational Technologies
IUNET - UNIUD
IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2021
Conference Paper
Download
A BEOL compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory
IBM, ETH
IEEE International Electron Devices Meeting 2020
Conference Paper
Download
Ferroelectric, Analog Resistive Switching in Back-End-of-Line Compatible TiN/Hf ZrO4/TiOx Junctions
IBM, ETH
Phys. Status Solidi RRL 2020, 2000524
Journal Article
Download
Adaptive Extreme Edge Computing for Wearable Devices
NaMLaB, UZH
Frontiers in Neuroscience
Journal Article
Download
Hafnia-based Double Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing
NaMLaB
ACS Applied Electronic Materials
Journal Article
Download
Ferroelectric Tunneling Junctions for Edge Computing
NaMLab, UG, CEA, NCRSD
IEEE International Symposium on Circuits and Systems (ISCAS) 2021, special session “Memristive Technologies for Edge-Computing Applications”
Conference Paper
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Ultra-Low-Power FDSOI Neural Circuits for Extreme-Edge Neuromorphic Intelligence
UZH
IEEE Transactions on Circuits and Systems
Journal Article
Download
Reliability aspects of ferroelectric TiN/Hf0.5Zr0.5O2/Ge capacitors grown by plasma assisted atomic oxygen deposition
NCSRD, IBM, ETH
Applied Physics Letters; Special Topic on “HfO2 Ferroelectrics”
Journal article
Download
Ferroelectric, Analog Resistive Switching in Back-End-of-Line Compatible TiN/Hf ZrO4/TiOx Junctions (accepted paper)
IBM, ETH
12th Annual Non-Volatile Memories Workshop
Journal Article
Download
CMOS back-end-of-line compatible ferroelectric tunnel junction devices  (accepted paper)
HZB
Solid State Electronics Journal special edition ‘Letters from INFOS 2021’ 
Journal Article
Download
Analog Resistive Switching in BEOL, Ferroelectric Synaptic Weights (accepted paper)
IBM, ETH
IEEE JEDS
Journal Article
Available soon
High-Conductance, Ohmic-like HfZrO4 Ferroelectric Memristor (accepted paper)
IBM
ESSDERC 2021
Journal Article
Available soon
Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions   (accepted paper)
IUNET -UNIUD, CEA, NaMLab
ESSDERC 2021
Journal Article
Available soon
Understanding the Reliability of Ferroelectric Tunnel Junction Operations using an Advanced Small-Signal Model (accepted paper)
IUNET - UNIMORE
IEEE IIRW 2021
Journal Article
Available soon
Operation and design of Ferroelectric FETs for a BEOL compatile device implementation (accepted paper)
IUNET - UNIUD
ESSDERC 2021
Journal Article
Available soon

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Project's Research Newsletter June 2020 -

 

 

 

 

 

 

 

Project's Research Newsletter June 2021 -     

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