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PUBLICATIONS

Title of the publication
Authors
Title of the journal or equivalent
Type of publication
Link to OA Repository
Modelling and design of FTJs as high reading-impedance synaptic devices
IUNET - UNIUD
IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2021
Conference Paper
Download
Ferroelectric Based FETs and Synaptic Devices for Highly Energy Efficient Computational Technologies
IUNET - UNIUD
IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2021
Conference Paper
Download
A BEOL compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory
IBM, ETH
IEEE International Electron Devices Meeting 2020
Conference Paper
Download
Ferroelectric, Analog Resistive Switching in Back-End-of-Line Compatible TiN/Hf ZrO4/TiOx Junctions
IBM, ETH
Phys. Status Solidi RRL 2020, 2000524
Journal Article
Download
Adaptive Extreme Edge Computing for Wearable Devices
NaMLaB, UZH
Frontiers in Neuroscience
Journal Article
Download
Hafnia-based Double Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing
NaMLaB
ACS Applied Electronic Materials
Journal Article
Download
Ferroelectric Tunneling Junctions for Edge Computing
NaMLab, UG, CEA, NCRSD
IEEE International Symposium on Circuits and Systems (ISCAS) 2021, special session “Memristive Technologies for Edge-Computing Applications”
Conference Paper
Download
Ultra-Low-Power FDSOI Neural Circuits for Extreme-Edge Neuromorphic Intelligence
UZH
IEEE Transactions on Circuits and Systems
Journal Article
Download
Reliability aspects of ferroelectric TiN/Hf0.5Zr0.5O2/Ge capacitors grown by plasma assisted atomic oxygen deposition
NCSRD, IBM, ETH
Applied Physics Letters; Special Topic on “HfO2 Ferroelectrics”
Journal article
Download
Ferroelectric, Analog Resistive Switching in Back-End-of-Line Compatible TiN/Hf ZrO4/TiOx Junctions
IBM, ETH
12th Annual Non-Volatile Memories Workshop
Journal Article
Download
CMOS back-end-of-line compatible ferroelectric tunnel junction devices
HZB
Solid State Electronics Journal special edition ‘Letters from INFOS 2021’ 
Journal Article
Download
Analog Resistive Switching in BEOL, Ferroelectric Synaptic Weights
IBM, ETH
IEEE JEDS
Journal Article
Download
High-Conductance, Ohmic-like HfZrO4 Ferroelectric Memristor (accepted paper)
IBM
ESSDERC 2021
Journal Article
Download
Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions
IUNET -UNIUD, CEA, NaMLab
ESSDERC 2021
Journal Article
Available soon
Understanding the Reliability of Ferroelectric Tunnel Junction Operations using an Advanced Small-Signal Model
IUNET - UNIMORE
IEEE IIRW 2021
Journal Article
Available soon
Operation and design of Ferroelectric FETs for a BEOL compatile device implementation
IUNET - UNIUD
ESSDERC 2021
Journal Article
Available soon
Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs. Optimal Conditions for a Synaptic Device Operation
IUNET- UNIUD, HZB
IEEE Transactions on Electron Devices
Journal Article
Available soon
Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware
IBM, ETH
Advanced Electronic Materials
Journal Article
Download
Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
IBM, ETH
IOP Science
Journal Article
Download
Combining Experiments and a Novel Small Signal Model to Investigate the Degradation Mechanisms in Ferroelectric Tunnel Junctions
IUNET-UNIMORE
IEEE International Reliability Physics Symposium (IRPS)
Conference Paper
Available soon
A 120dB Programmable Range On-Chip Pulse Generator for Characterizing Ferroelectric Devices
NAMLAB, UZH
IEEE International Symposium on Circuits and Sys-tems (ISCAS)
Conference Paper
Available soon
Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures
IUNET-UNIMORE
IEEE Journal of the Electron Devices Society
Journal Article
Available soon
Stochastic dendrites enable online learning in mixed-signal neuromorphic processing systems
UZH
IEEE International Symposiumon Circuits and Systems (ISCAS)
Conference Paper
Available soon
A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films
NAMLAB
AIP Applied Physics Letters
Journal Article
Available soon
Interplay between charge trapping and polari-zation switching in BEOL-compatible bilayer Ferroelectric Tunnel Junctions
NAMLAB, IUNET-UNIUD
IEEE Journal of the Electron Devices Society
Journal Article
Available soon

                                         RESEARCH NEWSLETTERS

 

 

 

 

Project's Research Newsletter June 2020 -

 

 

 

 

 

 

Project's Research Newsletter June 2021 -     

 

 

 

 

 

Project's Research Newsletter December 2021 -

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